Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamber
US6562123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2001 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Oct 23, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1072
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for growing single crystal silicon ingots of which portions are substantially free of agglomerated intrinsic point defects. An ingot is grown generally in accordance with the Czochralski method. A first portion of the ingot cools to a temperature which is less than a temperature TA at which agglomeration of intrinsic point defects in the ingot occurs during the time the ingot is being grown, while a second portion remains at a temperature above TA. The second portion of the ingot is subsequently maintained at a temperature above TA to produce a portion which is substantially free of agglomerated intrinsic point defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.