MIS transistor and method for making same on a semiconductor substrate

US6562687B1 · kind B1 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Simon Deleonibus · Le Pont-de-Claix, FR
• Georges Guegan · Seyssinet-Pariset, FR
• Christian Caillat · Wavre, BE
• Fabien Coudert · Saint-Martin-d'Hères, FR

Key dates

• Filing date: Jun 28, 2001
• Grant date: May 13, 2003
• Expiry date: Jun 28, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/605
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to an MIS transistor comprising a channel region (118), source (114) and drain (116) regions arranged on either side of the channel, and a gate (150) set closely above the channel region. According to the invention, the channel has a doped central part (140), located between the source and drain regions, and separated from said source and drain regions.