Method of manufacturing nitride semiconductor substrate
US6562701B2 · kind B2 · utility
39Cited by
15References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2002 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Feb 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings in a stripe shape is formed on a main surface of a base substrate. Then, on the base substrate, a semiconductor layer of nitride is selectively grown through the mask film. Then, a laser beam is irradiated upon the interface between the semiconductor layer and the base substrate to separate the semiconductor layer from the base substrate, so that a nitride semiconductor substrate is formed from the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.