Structure and manufacturing method of SiC dual metal trench Schottky diode
US6562706B1 · kind B1 · utility
15Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2001 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Dec 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and manufacturing method of an SiC dual metal trench diode. P-type impurity is doped into the bottom of the trench layer of the dual metal trench Schottky diode to eliminate leakage current or avalanche breakdown in the corner of the trench layer in order to increase the concentration of the epitaxial layer. N-type impurity can also be doped into the region between the Schottky contact metal and the epitaxial layer to adjust the Schottky barrier and thus reduce forward voltage required for current to flow through.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.