Ming-Jer Kao
26Patents
12h-index
31Co-inventors
81Inventor score
Filing activity: Jan 7, 1999 → Mar 26, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7515458B2 | Structure and access method for magnetic memory cell and circuit of magnetic memory | Physics | 39 | Active |
| US6852582B2 | Carbon nanotube gate field effect transistor | Emerging Cross-Sectional Technologies | 28 | Expired |
| US6723624B2 | Method for fabricating n-type carbon nanotube device | Emerging Cross-Sectional Technologies | 24 | Expired |
| US6821911B1 | Manufacturing method of carbon nanotube transistors | Emerging Cross-Sectional Technologies | 21 | Expired |
| US7023726B1 | Hybrid magnetoresistive random access memory (MRAM) architecture | Physics | 20 | Expired |
| US6642595B1 | Magnetic random access memory with low writing current | Physics | 19 | Expired |
| US6757189B2 | Magnetic random access memory with memory cells of different resistances connected in series and parallel | Physics | 19 | Expired |
| US7182914B2 | Structure and manufacturing process of a nano device transistor for a biosensor | Electricity | 16 | Expired |
| US6562706B1 | Structure and manufacturing method of SiC dual metal trench Schottky diode | Electricity | 15 | Expired |
| US6962839B2 | Apparatus and manufacturing process of carbon nanotube gate field effect transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7577019B2 | Magnetic memory cell with multiple-bit in stacked structure and magnetic memory device | Emerging Cross-Sectional Technologies | 12 | Active |
| US6791887B2 | High reliable reference current generator for MRAM | Physics | 12 | Expired |
| US6862228B2 | High reliable reference current generator for MRAM | Physics | 7 | Expired |
| US5981999A | Power trench DMOS with large active cell density | Electricity | 6 | Expired |
| US7539049B2 | Magnetic random access memory and operation method | Emerging Cross-Sectional Technologies | 4 | Active |
| US7463510B2 | High-bandwidth magnetoresistive random access memory devices | Physics | 4 | Active |
| US7226531B2 | Method of making an electroplated interconnection wire of a composite of metal and carbon nanotubes | Chemistry; Metallurgy | 3 | Expired |
| US7420837B2 | Method for switching magnetic moment in magnetoresistive random access memory with low current | Physics | 2 | Expired |
| US7577017B2 | High-bandwidth magnetoresistive random access memory devices and methods of operation thereof | Physics | 1 | Active |
| US7001805B2 | Method for fabricating n-type carbon nanotube device | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7800937B2 | Method for switching magnetic moment in magnetoresistive random access memory with low current | Physics | 1 | Active |
| US10541233B2 | Display device | Electricity | 0 | Active |
| US7359237B2 | High write selectivity and low power magnetic random access memory and method for fabricating the same | Physics | 0 | Expired |
| US7208808B2 | Magnetic random access memory with lower switching field | Electricity | 0 | Expired |
| US7535081B2 | Metal nanoline process and applications on growth of aligned nanostructure thereof | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.