Method of forming a semiconductor device using selective epitaxial growth
US6562707B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2002 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Jan 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device using selective epitaxial growth (SEG) is provided. This method includes forming an insulating layer pattern having a window on a semiconductor substrate. The window exposes a predetermined region of the semiconductor substrate. The substrate having the window is cleaned, thereby removing any native oxide layer on the exposed substrate. The cleaned substrate is oxidized. Accordingly, a sacrificial oxide layer is formed thereon. The sacrificial oxide layer is removed. Thus, the exposed substrate has substantially no crystalline defects. A single crystalline semiconductor layer is then grown on the exposed substrate using SEG.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.