Method of filling gaps on a semiconductor wafer

US6562734B2 · kind B2 · utility

Assignee

• Semiconductor 300 GmbH & Co. KG · DE

Inventor

• Markus Kirchhoff · Radeberg, DE

Key dates

• Filing date: Sep 17, 2001
• Grant date: May 13, 2003
• Expiry date: Sep 17, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02164
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of filling gaps on a semiconductor wafer with a dielectric material employs a plasma enhanced chemical vapor deposition (PECVD) process with a temperature in the range of 500 to 700° C. As a result of the deposition process, gaps resulting from e.g. shallow trench isolation or premetal dielectric techniques are filled homogeneously without any voids. The deposition may be improved by applying two radio frequency signals with different frequencies.