MOS transistor and method for producing the transistor
US6563179B2 · kind B2 · utility
1Cited by
5References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 11, 2002 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Mar 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Terminal regions of source/drain zones of an MOS transistor are configured over the substrate in the form of conductive structures, are separated from the substrate by separating layers, and exhibit a larger horizontal cross-section than doped regions forming the source/drain zones that are arranged in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.