Method of adding Zener zap aluminum bridged anti-fuses to a tungsten plug process
US6563189B1 · kind B1 · utility
5Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2001 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Jun 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a two-terminal Zener zap diode device structure that relies upon the formation of an anti-fuse through a silicon substrate with the melting and flow of an aluminum alloy to create the current path. The use of oversized contacts in the diode structure permits the Tungsten plug to be eliminated from the diode structure and, thus, permits an aluminum alloy melt and flow mechanism to be used with a Tungsten plug process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.