William M. Coppock
14Patents
5h-index
11Co-inventors
59Inventor score
Filing activity: Feb 6, 1996 → Jun 4, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7332403B1 | System and method for providing a buried thin film resistor having end caps defined by a dielectric mask | Electricity | 14 | Expired |
| US6815797B1 | Silicide bridged anti-fuse | Electricity | 11 | Expired |
| US7507607B1 | Method of forming a silicide bridged anti-fuse with a tungsten plug metalization process | Electricity | 7 | Active |
| US6563189B1 | Method of adding Zener zap aluminum bridged anti-fuses to a tungsten plug process | Electricity | 5 | Expired |
| US8959628B2 | Method and apparatus for preventing unwanted code execution | Electricity | 5 | Active |
| US6440781B1 | Method of adding bias-independent aluminum bridged anti-fuses to a tungsten plug process | Electricity | 4 | Expired |
| US5686857A | Zero-crossing triac and method | Electricity | 4 | Expired |
| US7118998B1 | Method of forming a conductive structure | Electricity | 3 | Expired |
| US7808048B1 | System and method for providing a buried thin film resistor having end caps defined by a dielectric mask | Electricity | 3 | Active |
| US6815714B1 | Conductive structure in a semiconductor material | Electricity | 2 | Expired |
| US7172973B1 | System and method for selectively modifying a wet etch rate in a large area | Electricity | 2 | Expired |
| US6930010B1 | Method of forming a conductive structure in a semiconductor material | Electricity | 1 | Expired |
| US7470594B1 | System and method for controlling the formation of an interfacial oxide layer in a polysilicon emitter transistor | Emerging Cross-Sectional Technologies | 1 | Expired |
| US6812486B1 | Conductive structure and method of forming the structure | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.