Method for manufacturing substrate for inspecting semiconductor device
US6566149B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Mar 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R3/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
For an inspection tray, a silicon substrate including a beam or a diaphragm, a probe and wiring is used. To highly accurately position a chip to be inspected, a second substrate for alignment is disposed on the substrate. To position the probe having wiring disposed on the first substrate and the electrode pad of the chip to be inspected, a projection or a groove is formed in each of both substrates. Preferably, the projection or groove should be formed by silicon anisotorpic etching to have a (111) crystal surface. As another machining method, dry etching can be used for machining the positioning projection or groove. By using an inductively coupled plasma-reactive ion etching (ICP-RIE) device for the dry etching, a vertical column or groove can be easily machined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.