Method of forming a color filter
US6566151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Jul 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
The present invention provides a method for increasing the adhesion of a color filter on a semiconductor wafer. The semiconductor wafer comprises a substrate, a plurality of MOS transistor sensors positioned on the substrate, and a plurality of insulators formed between two MOS transistor sensors on the substrate. The present invention first involves forming a dielectric layer on the semiconductor wafer, which covers each MOS transistor sensor and each insulator. Thereafter, a passivation layer is formed on the dielectric layer, and a plurality of recesses is formed in the passivation layer corresponding to a MOS transistor sensor. Finally, a color filter is formed in each recess. The recess is used to increase the contact areas between the color filter and the passivation layer so as to prevent stripping of the color filter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.