Method of forming a color filter
US6566160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Jun 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
The present invention provides a method for increasing adhesion of color filters and preventing cross talk effects on a semiconductor wafer. The method first involves forming a dielectric layer on the semiconductor wafer, which covers each MOS transistor sensor formed on the surface of the semiconductor wafer. Then, a plurality of metal layers are formed on the dielectric layer, each two metal layers positioned approximately above two ends of one MOS transistor sensor. Next, a passivation layer is formed, followed by the formation of a first color filter on the passivation layer. The two ends of the first color filter are aligned approximately above the two metal layers. Thereafter, a second color filter and a third color filter are sequentially formed on the passivation layer, and portions of both the second color filter and the third color filter cover one end of the first color filter. The portions of each color filter covering one other are used to enhance adhesion of the color filters, and simultaneously to function as barriers to prevent cross talk effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.