Method of producing Cu (In, Ga) (Se, S) 2 semiconductor film
US6566162B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2002 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Mar 14, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
Abstract
A method of producing a semiconductor film of Cu(MIII)(MVI)2 wherein MIII represents In1-xGax where x is between 0 and 1 and MVI represents SeyS1-y where y is between 0.5 and 1, including the steps of:(a) depositing on a substrate a precursor Cu(MIII)(MVI)2 film having a molar ratio of Cu:MIII of less than 1.0:1.0 but not less than 1.0:1.4 and(b) annealing the precursor film at a temperature of 400-500° C. in an oxygen-containing atmosphere to form a buffer layer of indium oxide and/or gallium oxide and a Cu(In1-xGax)(SeyS1-y)2 film interposed between the substrate and the buffer layer. The buffer layer may be removed by etching with an acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.