Kakuya Iwata
10Patents
6h-index
7Co-inventors
51Inventor score
Filing activity: Aug 28, 2001 → Dec 18, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6674098B1 | ZnO compound semiconductor light emitting element | Electricity | 25 | Expired |
| US6649434B2 | Method of manufacturing semiconductor device having ZnO based oxide semiconductor layer | Electricity | 23 | Expired |
| US6638846B2 | Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device | Chemistry; Metallurgy | 22 | Expired |
| US6566162B2 | Method of producing Cu (In, Ga) (Se, S) 2 semiconductor film | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6987029B2 | ZnO based compound semiconductor light emitting device and method for manufacturing the same | Electricity | 8 | Expired |
| US6531408B2 | Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same | Electricity | 6 | Expired |
| US7605012B2 | ZnO based compound semiconductor light emitting device and method for manufacturing the same | Electricity | 6 | Expired |
| US6472241B2 | Radical cell device and method for manufacturing groups II-VI compound semiconductor device | Electricity | 4 | Expired |
| US7770839B2 | Flight machinery | Performing Operations; Transporting | 3 | Active |
| US6770913B2 | ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.