Method for creating self-aligned alloy capping layers for copper interconnect structures
US6566262B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Nov 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention include a capping layer of alloy material formed over a copper-containing layer, the alloy configured to prevent diffusion of copper through the capping layer. In another embodiment the alloy capping layer is self-aligned to the underlying conducting layer. Specific embodiments include capping layers formed of alloys of copper with materials including but not limited to calcium, strontium, barium, and other alkaline earth metals, as well as materials from other groups, for example, cadmium or selenium. The invention also includes methods for forming an alloy capping layer on a copper-containing conducting structure. One such method includes providing a substrate having formed thereon electrically conducting layer comprised of a copper-containing material and forming an alloy capping layer on the electrically conducting layer. In another method embodiment, forming the alloy capping layer includes forming a self-aligned capping layer over the conducting layer.In another method embodiment for forming a capping layer on a copper-containing conducting structure, a substrate having formed thereon electrically conducting layer comprised of a copper-containing …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.