Method for forming an opening in a semiconductor device substrate
US6566264B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Nov 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a first dielectric film (24), and a second dielectric film (32) are formed over a substrate (10). The substrate is cured to at least partially change a property of the second dielectric film thereby forming an intermediate etch stop (46). A third dielectric film (42) is formed over the substrate (10). The substrate (10) is then etched to remove portions of the first dielectric film (24) and portions of the third dielectric film (42) using the intermediate etch stop (46) to form a portion of an interconnect opening (103). In an alternative embodiment, a resist layer (92), and portions of an interlevel dielectric layer (50) are etched. Upon completion of the step of etching, the photoresist layer (92) and portions of the interlevel dielectric layer (50) are completely removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.