Heterojunction bipolar transferred electron tetrode

US6566694B2 · kind B2 · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventor

• John Twynam · Regensburg, DE

Key dates

• Filing date: Mar 30, 2001
• Grant date: May 20, 2003
• Expiry date: Apr 22, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/912

Abstract

A heterojunction bipolar transferred electron tetrode has an anode region providing a first terminal, an active region in which Gunn-Hilsum oscillations are generated, a base region providing a second terminal, a cathode region providing a third terminal, and a fourth terminal which is operable independently of the three terminals. The fourth terminal can take the form of a second cathode-type structure, a second base region or a Schottky gate electrode. The cathode region and fourth terminal are in proximity enough to each other such that one of the cathode region and the fourth terminal is usable as an input terminal and that the other of the cathode region and the fourth terminal is usable as a terminal to which an electrical signal for disturbing an electric field profile or a current density in the active region is applied.