Stabilization of low dielectric constant film with in situ capping layer
US6566757B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Mar 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure for microelectronic devices includes interconnect lines having dielectric material disposed therebetween as an intralayer dielectric, and a capping structure, also disposed between the interconnect lines, that reduces outgassing from the material. Typical embodiments include fluorinated dielectric materials, such as amorphous fluorinated carbon. The capping structure also acts as a moisture barrier to prevent moisture from penetrating into the fluorinated material and combining therewith to produce corrosive chemicals. The capping structure is formed in-situ so that the fluorinated dielectric material is not exposed to moisture prior to the formation of the capping structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.