Self-aligned contact areas for sidewall image transfer formed conductors
US6566759B1 · kind B1 · utility
9Cited by
34References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1999 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Aug 23, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure for forming a sidewall image transfer conductor having a contact pad includes forming an insulator to include a recess, depositing a conductor around the insulator, and etching the conductor to form the sidewall image transfer conductor, wherein the conductor remains in the recess and forms the contact pad and the recess is perpendicular to the sidewall image transfer conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.