Method and apparatus for correcting mask pattern, mask having corrected mask pattern, and storage medium storing program for executing the method for correcting mask pattern
US6567972B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Mar 30, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for correcting a mask pattern comprising the steps of inputting a layout pattern, extracting mask patterns from this layout pattern in a range on which the optical proximity effects exert, classifying the patterns so extracted into to-be-corrected patterns subjected to a pattern correction together with an interest pattern edge correction and reference patterns whose edges are not moved, correcting only the to-be-corrected patterns collectively according to a set exposure condition so that dimensions of the transferred patterns are identical to those of the layout pattern, calculating the exposure dose at a focal position necessary for ensuring the depth of focus, and modifying a correction amount of each of the above-mentioned to-be-corrected patterns by comparing the exposure dose according to the set exposure dose condition and the exposure dose calculated by the calculation step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.