Silicon epitaxial wafer and production method therefor
US6569239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2001 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Jul 10, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A surface roughness distribution in the surface of a silicon epitaxial wafer is made uniform by optimizing a temperature distribution in the surface of a susceptor used in a vapor phase thin film growth apparatus. The susceptor is not supported by its center of the rear surface thereof, but only the peripheral portion thereof is supported using vertical pins respectively provided at the far ends of spokes radially branched from a rotary shaft. The susceptor is constituted so that a difference in temperature between the maximum and minimum in the surface of a silicon wafer is suppressed to a value equal to or less than 7° C. Hence, a surface roughness distribution in the surface of the silicon epitaxial wafer can be suppressed to a value equal to or less than 0.02 ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.