Transparent conductive film of zinc oxide
US6569548B2 · kind B2 · utility
17Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2001 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Aug 2, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
An n-type dopant of at least one of elements of Group III such as Ga and the like and a p-type dopant of at least one of elements of Group V such as N and the like are doped to a ZnO crystalline layer as dopants, and the n-type dopant is more than the p-type dopant and doped into the ZnO layer in an impurity concentration of 1×1018 cm−3 or more. Therefore, it is possible to lower the resistivity of the ZnO layer with a degree of the transparency high and to obtain the transparent conductive film of zinc oxide having the electrical resistivity lower than ITO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.