Ken Nakahara
52Patents
11h-index
50Co-inventors
81Inventor score
Filing activity: Sep 9, 1999 → Aug 18, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7132691B1 | Semiconductor light-emitting device and method for manufacturing the same | Electricity | 136 | Expired |
| US6735230B1 | Semiconductor luminous elements and semiconductor laser | Electricity | 49 | Expired |
| US8795184B2 | Wireless plethysmogram sensor unit, a processing unit for plethysmogram and a plethysmogram system | Human Necessities | 28 | Active |
| US6674098B1 | ZnO compound semiconductor light emitting element | Electricity | 25 | Expired |
| US6649434B2 | Method of manufacturing semiconductor device having ZnO based oxide semiconductor layer | Electricity | 23 | Expired |
| US9837521B2 | Nitride semiconductor device and fabrication method therefor | Electricity | 23 | Active |
| US6638846B2 | Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device | Chemistry; Metallurgy | 22 | Expired |
| US7960727B2 | Zinc oxide based compound semiconductor device | Electricity | 21 | Active |
| US8004006B2 | Nitride semiconductor light emitting element | Electricity | 20 | Active |
| US6569548B2 | Transparent conductive film of zinc oxide | Emerging Cross-Sectional Technologies | 17 | Expired |
| US7781791B2 | Semiconductor light emitting element | Electricity | 13 | Active |
| US6987029B2 | ZnO based compound semiconductor light emitting device and method for manufacturing the same | Electricity | 8 | Expired |
| US7582905B2 | Semiconductor light emitting device | Electricity | 7 | Active |
| US7906791B2 | Semiconductor light emitting element | Electricity | 7 | Active |
| US7196348B2 | GaN system semiconductor light emitting device excellent in light emission efficiency and light extracting efficiency | Electricity | 7 | Expired |
| US6531408B2 | Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same | Electricity | 6 | Expired |
| US7002179B2 | ZnO system semiconductor device | Electricity | 6 | Expired |
| US7605012B2 | ZnO based compound semiconductor light emitting device and method for manufacturing the same | Electricity | 6 | Expired |
| US8053756B2 | Nitride semiconductor light emitting element | Electricity | 5 | Active |
| US7741637B2 | ZnO-based semiconductor device | Electricity | 4 | Active |
| US8946727B2 | Zinc oxide based compound semiconductor device | Electricity | 4 | Active |
| US6472241B2 | Radical cell device and method for manufacturing groups II-VI compound semiconductor device | Electricity | 4 | Expired |
| US8124985B2 | Semiconductor light emitting device and method for manufacturing the same | Electricity | 3 | Active |
| US7292382B2 | Light control unit | Physics | 3 | Expired |
| US8304795B2 | Semiconductor light emitting device with concave-convex pattern and method for manufacturing the same | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.