Metal structure for a phase-change memory device
US6569705B2 · kind B2 · utility
189Cited by
21References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2000 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Jul 10, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
Abstract
The invention relates to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structure also prevents volatilization of the chalcogenide memory material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.