Silicon and oxygen ion co-implanation for metallic gettering in epitaxial wafers
US6569749B1 · kind B1 · utility
7Cited by
16References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1999 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Sep 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel method of generating intrinsic gettering sites in epitaxial wafers employs co-implanting silicon and oxygen into a substrate of the wafer, annealing the substrate at a low temperature, and then depositing the epitaxial layer on a surface of the substrate. The epitaxial deposition acts as an in-situ anneal to form dislocation loops that act as gettering sites. Oxygen precipitate clusters form during the method, which clusters act to anchor the dislocation loops and prevent them from gliding to the wafer surface over time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.