Method for forming a silicide of metal with a high melting point in a semiconductor device
US6569766B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2000 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Jun 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicide of a metal with high-melting-point in a semiconductor device includes the step of removing a higher-density impurity area which acts for prevention of forming the metal-silicide layer on the surface of the impurity-diffused region between the steps of implanting impurities to form an impurity-implanted region and annealing for reactions of cobalt and silicon of the diffused layer. The above-mentioned method of forming the metal-silicide layer on the surface of the impurity-diffused region proceeds smoothly to thereby prevent degradation of the initial gate withstand voltage and a higher sheet resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.