Method for fabricating semiconductor integrated circuit device
US6569780B2 · kind B2 · utility
9Cited by
8References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2001 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Aug 28, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.