Thin film transistor and method for manufacturing the same
US6570184B2 · kind B2 · utility
13Cited by
3References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2002 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Jan 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.