Bipolar transistor with high breakdown voltage collector
US6570242B1 · kind B1 · utility
8Cited by
2References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 1998 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Oct 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A transistor that includes a doped buried region 320 within a semiconductor body 300, 340. The doped buried region includes a portion having a first thickness 348 and a second thickness, the first thickness being less than the second thickness. In one embodiment the first thickness is about half the second thickness. The transistor also includes a collector region 342 over the buried region, a base region 396 within the collector region, and an emitter region 422 within the base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.