Methods for forming microtips in a field emission device
US6572425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jul 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Electron emission structures formed using standard semiconductor processes on a substrate first prepared with a topographical feature are disclosed. At least one layer of a first material is concurrently deposited on the substrate and etched from the substrate to form an atomically sharp feature. An at least one layer of a second material is deposited over the atomically sharp feature. A conductive layer is deposited over the at least one layer of the second material. A selected area of material is removed from the conductive layer and the at least one layer of second material to expose the atomically sharp feature. Finally, electrical connectivity is provided to elements of the electron emission structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.