Semiconductor device having a metal gate with a work function compatible with a semiconductor device
US6573149B2 · kind B2 · utility
21Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Aug 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.