Ozone-enhanced oxidation for high-k dielectric semiconductor devices
US6573193B2 · kind B2 · utility
16Cited by
8References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 13, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Aug 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low temperature ozone-enhanced oxidation process is presented whereby amorphous high dielectric constant film devices are subject to oxidation processes at temperatures whereby crystallization of the amorphous high dielectric constant film is avoided, thereby lowering leakage currents and reducing the required thickness to achieve an equivalent SiO2 thickness (EOT)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.