Thermally stable poly-Si/high dielectric constant material interfaces
US6573197B2 · kind B2 · utility
15Cited by
4References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Apr 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of fabricating a thermally stable polysilicon/high-k dielectric film stack utilizing a deposition method wherein Si-containing precursor gas which includes silicon and hydrogen is diluted with an inert gas such as He so as to significantly reduce the hydrogen content in the resultant polysilicon film. Semiconductor structures such as field effect transistors (FETs) and capacitors which include at least the thermally stable polysilicon/high-k dielectric film stack are also provided herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.