Bi mode ion implantation with non-parallel ion beams
US6573518B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2000 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jul 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24542
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for implanting ions into a workpiece, such as a semiconductor wafer, includes the steps of generating an ion beam, measuring an angle of non-parallelism of the ion beam, tilting the wafer at a first angle, performing a first implant at the first angle, tilting the wafer at a second angle, and performing a second implant at the second angle. The first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism. Preferably, the first and second implants are controlled to provide substantially equal ion doses in the workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.