Semiconductor light-emitting element
US6573535B2 · kind B2 · utility
10Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Nov 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
Abstract
In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.