Semiconductor device
US6573586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2002 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Feb 25, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the amplified current to an associated read data line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.