Hideyuki Matsuoka
62Patents
18h-index
62Co-inventors
87Inventor score
Filing activity: Oct 31, 1988 → Dec 7, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7126149B2 | Phase change memory and phase change recording medium | Electricity | 147 | Expired |
| US7078273B2 | Semiconductor memory cell and method of forming same | Electricity | 109 | Expired |
| US6130449A | Semiconductor memory device and a method for fabricating the same | Electricity | 70 | Expired |
| US6560135B2 | Magnetic semiconductor memory apparatus and method of manufacturing the same | Electricity | 66 | Expired |
| US7123535B2 | Semiconductor integrated circuit device | Physics | 65 | Expired |
| US6740921B2 | Semiconductor memory cell and method of forming same | Electricity | 64 | Expired |
| US7489552B2 | Semiconductor integrated circuit device | Physics | 56 | Active |
| US6670642B2 | Semiconductor memory device using vertical-channel transistors | Electricity | 56 | Expired |
| US7071485B2 | Semiconductor integrated circuit device | Electricity | 37 | Expired |
| US6570206B1 | Semiconductor device | Electricity | 36 | Expired |
| US7110284B2 | Magnetic nonvolatile memory cell and magnetic random access memory using the same | Physics | 36 | Expired |
| US7116593B2 | Storage device | Electricity | 34 | Expired |
| US6862235B2 | Semiconductor device which is low in power and high in speed and is highly integrated | Physics | 27 | Expired |
| US7098478B2 | Semiconductor memory device using vertical-channel transistors | Electricity | 26 | Expired |
| US5270232A | Process for fabricating field effect transistor | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6407420B1 | Integrated circuit device having line width determined by side wall spacer provided in openings formed in insulating film for connection conductors | Electricity | 22 | Expired |
| US6376304B1 | Semiconductor memory device and a method for fabricating the same | Electricity | 20 | Expired |
| US7038961B2 | Semiconductor device | Physics | 18 | Expired |
| US6621110B1 | Semiconductor intergrated circuit device and a method of manufacture thereof | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6573586B2 | Semiconductor device | Physics | 18 | Expired |
| US7335907B2 | Memory device | Physics | 16 | Expired |
| US6965533B2 | Semiconductor device which is low in power and high in speed and is highly integrated | Physics | 13 | Expired |
| US7470923B2 | Semiconductor integrated circuit device | Electricity | 12 | Expired |
| US6809364B2 | Semiconductor integrated circuit device and a method of manufacture thereof | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4977435A | Semiconductor device with a split conduction channel | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.