Automatic LDMOS biasing with long term hot carrier compensation
US6573796B2 · kind B2 · utility
0Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Sep 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/193
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed are systems and methods for automatic biasing of LDMOS devices at turn-on. The invention provides bias point setting with compensation for hot carrier effects each time the LDMOS device is turned on and also provides temperature compensation during operation of the device. The systems and methods of the invention are scalable such that a plurality of LDMOS devices may simultaneously have their bias points set, and temperature compensation provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.