Magnetic tunnel junction device and method including a tunneling barrier layer formed by oxidations of metallic alloys
US6574079B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Oct 22, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/90
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction is made up of two ferromagnetic layers, one of which has its magnetic moment fixed and the other of which has its magnetic moment free to rotate, an insulating tunneling barrier layer between the ferromagnetic layers for permitting tunneling current perpendicularly through the layers. The insulating barrier is preferably formed by the oxidation of a thin metallic alloy layer of particular materials which lead to a nonmagnetic barrier having a relatively low barrier height. These low barrier height insulating materials allow for the formation of a magnetic tunnel junction with a relatively thick barrier while maintaining a low resistance that is suitable, for example, in magnetoresistance read head applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.