Jijun Sun
48Patents
13h-index
27Co-inventors
81Inventor score
Filing activity: Jul 13, 2001 → Mar 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7098495B2 | Magnetic tunnel junction element structures and methods for fabricating the same | Electricity | 76 | Expired |
| US8686484B2 | Spin-torque magnetoresistive memory element and method of fabricating same | Electricity | 65 | Active |
| US6801415B2 | Nanocrystalline layers for improved MRAM tunnel junctions | Emerging Cross-Sectional Technologies | 52 | Expired |
| US6818961B1 | Oblique deposition to induce magnetic anisotropy for MRAM cells | Electricity | 46 | Expired |
| US9419208B2 | Magnetoresistive memory element and method of fabricating same | Electricity | 44 | Active |
| US7572645B2 | Magnetic tunnel junction structure and method | Electricity | 40 | Active |
| US6574079B2 | Magnetic tunnel junction device and method including a tunneling barrier layer formed by oxidations of metallic alloys | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6946697B2 | Synthetic antiferromagnet structures for use in MTJs in MRAM technology | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6710987B2 | Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes | Physics | 21 | Expired |
| US9159906B2 | Spin-torque magnetoresistive memory element and method of fabricating same | Electricity | 17 | Active |
| US9553258B2 | Magnetoresistive memory element and method of fabricating same | Electricity | 15 | Active |
| US9281168B2 | Reducing switching variation in magnetoresistive devices | Electricity | 13 | Active |
| US8216703B2 | Magnetic tunnel junction device | Emerging Cross-Sectional Technologies | 13 | Active |
| US7129098B2 | Reduced power magnetoresistive random access memory elements | Electricity | 12 | Expired |
| US7684161B2 | Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence | Emerging Cross-Sectional Technologies | 10 | Active |
| US7635654B2 | Magnetic tunnel junction device with improved barrier layer | Electricity | 7 | Active |
| US9640753B2 | Magnetic field sensor | Emerging Cross-Sectional Technologies | 6 | Active |
| US8647891B2 | Two-axis magnetic field sensor having reduced compensation angle for zero offset | Emerging Cross-Sectional Technologies | 6 | Active |
| US10483460B2 | Method of manufacturing a magnetoresistive stack/ structure using plurality of encapsulation layers | Physics | 6 | Active |
| US7226796B2 | Synthetic antiferromagnet structures for use in MTJs in MRAM technology | Emerging Cross-Sectional Technologies | 6 | Expired |
| US9947865B2 | Magnetoresistive stack and method of fabricating same | Electricity | 5 | Active |
| US10483320B2 | Magnetoresistive stack with seed region and method of manufacturing the same | Electricity | 5 | Active |
| US8508221B2 | Two-axis magnetic field sensor having reduced compensation angle for zero offset | Emerging Cross-Sectional Technologies | 4 | Active |
| US10199574B2 | Magnetoresistive stack and method of fabricating same | Electricity | 3 | Active |
| US7329935B2 | Low power magnetoresistive random access memory elements | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.