Etching of silicon nitride by anhydrous halogen gas
US6576151B1 · kind B1 · utility
39Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2000 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jan 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method for removing silicon nitride from a substrate, characterised in that it comprises contacting said substrate with a molten halogen salt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.