Method to fabricate smooth-surfaced crystalline phase-change layer for atomic resolution storage device
US6576318B2 · kind B2 · utility
7Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jul 26, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a crystalline, phase-change layer that remains atomically smooth on its surface. Also, an atomically smooth, crystalline, phase-change layer made according to this method. The method can include forming a phase-change layer over a substrate, forming a thick capping layer over the phase-change layer, changing the phase-change layer from an amorphous phase to a crystalline phase, removing the thick capping layer, and forming a thin capping layer over the phase-change layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.