Heon Lee
33Patents
9h-index
45Co-inventors
71Inventor score
Filing activity: Feb 20, 2001 → Jun 29, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6605821B1 | Phase change material electronic memory structure and method for forming | Emerging Cross-Sectional Technologies | 229 | Expired |
| US6746892B2 | Low heat loss and small contact area composite electrode for a phase change media memory device | Electricity | 61 | Expired |
| US6743368B2 | Nano-size imprinting stamp using spacer technique | Emerging Cross-Sectional Technologies | 40 | Expired |
| US6755984B2 | Micro-casted silicon carbide nano-imprinting stamp | Emerging Cross-Sectional Technologies | 24 | Expired |
| US6759180B2 | Method of fabricating sub-lithographic sized line and space patterns for nano-imprinting lithography | Electricity | 22 | Expired |
| US6900747B2 | Method of compressing lookup table for reducing memory, non-linear function generating apparatus having lookup table compressed using the method, and non-linear function generating method | Electricity | 13 | Expired |
| US6984530B2 | Method of fabricating a MRAM device | Electricity | 13 | Expired |
| US6537846B2 | Substrate bonding using a selenidation reaction | Electricity | 12 | Expired |
| US6916511B2 | Method of hardening a nano-imprinting stamp | Emerging Cross-Sectional Technologies | 11 | Expired |
| US9489540B2 | Memory controller with encryption and decryption engine | Electricity | 7 | Active |
| US6576318B2 | Method to fabricate smooth-surfaced crystalline phase-change layer for atomic resolution storage device | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7462292B2 | Silicon carbide imprint stamp | Chemistry; Metallurgy | 6 | Expired |
| US6989327B2 | Forming a contact in a thin-film device | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6839271B1 | Magnetic memory device | Physics | 5 | Expired |
| US6927092B2 | Method of forming a shared global word line MRAM structure | Physics | 4 | Expired |
| US6673714B2 | Method of fabricating a sub-lithographic sized via | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6937506B2 | Magnetic memory device | Physics | 3 | Expired |
| US9135459B2 | Security management unit, host controller interface including same, method operating host controller interface, and devices including host controller interface | Physics | 3 | Active |
| US6664193B2 | Device isolation process flow for ARS system | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7709882B2 | Storage device with charge trapping structure and methods | Physics | 2 | Active |
| US9703960B2 | Electronic system having integrity verification device | Physics | 2 | Active |
| US7060625B2 | Imprint stamp | Chemistry; Metallurgy | 2 | Expired |
| US7102921B2 | Magnetic memory device | Physics | 2 | Expired |
| US6900468B2 | Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices | Physics | 1 | Expired |
| US9843440B2 | Encryptor/decryptor, electronic device including encryptor/decryptor, and method of operating encryptor/decryptor | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.