Dielectric films with low dielectric constants

US6576345B1 · kind B1 · utility

Inventors

• Patrick A. Van Cleemput · San Jose, US
• Ravi Laxman · San Jose, US
• Jen Shu · Saratoga, US
• Michelle T. Schulberg · Palo Alto, US
• Bunsen B. Nie · Fremont, US

Key dates

• Filing date: Nov 30, 2000
• Grant date: Jun 10, 2003
• Expiry date: Jan 10, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31663
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like molecular structure and porous nature. Supercritical fluids may be used as the reaction medium and developer both to the dissolve and deliver the caged-siloxane precursors and to remove reagents and byproducts from the reaction chamber and resultant porous film created.