Patrick A. Van Cleemput
54Patents
16h-index
83Co-inventors
87Inventor score
Filing activity: Jun 17, 1997 → Dec 22, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7208389B1 | Method of porogen removal from porous low-k films using UV radiation | Electricity | 558 | Expired |
| US6030881A | High throughput chemical vapor deposition process capable of filling high aspect ratio structures | Chemistry; Metallurgy | 430 | Expired |
| US9824893B1 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 413 | Active |
| US6395150B1 | Very high aspect ratio gapfill using HDP | Electricity | 349 | Expired |
| US5872058A | High aspect ratio gapfill process by using HDP | Electricity | 326 | Expired |
| US6340628B1 | Method to deposit SiOCH films with dielectric constant below 3.0 | Electricity | 108 | Expired |
| US7176144B1 | Plasma detemplating and silanol capping of porous dielectric films | Electricity | 87 | Expired |
| US6576345B1 | Dielectric films with low dielectric constants | Emerging Cross-Sectional Technologies | 73 | Expired |
| US6867152B1 | Properties of a silica thin film produced by a rapid vapor deposition (RVD) process | Emerging Cross-Sectional Technologies | 65 | Expired |
| US6550484B1 | Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processing | Electricity | 48 | Expired |
| US6846391B1 | Process for depositing F-doped silica glass in high aspect ratio structures | Electricity | 32 | Expired |
| US6766810B1 | Methods and apparatus to control pressure in a supercritical fluid reactor | Emerging Cross-Sectional Technologies | 31 | Expired |
| US9773643B1 | Apparatus and method for deposition and etch in gap fill | Electricity | 28 | Active |
| US10510590B2 | Low resistivity films containing molybdenum | Electricity | 18 | Active |
| US11031245B2 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 16 | Active |
| US6149779A | Low-k BSG gap fill process using HDP | Electricity | 16 | Expired |
| US10373806B2 | Apparatus and method for deposition and etch in gap fill | Electricity | 15 | Active |
| US11088019B2 | Method to create air gaps | Electricity | 14 | Active |
| US9245739B2 | Low-K oxide deposition by hydrolysis and condensation | Electricity | 14 | Active |
| US11183383B2 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 13 | Active |
| US6258653A | Silicon nitride barrier for capacitance maximization of tantalum oxide capacitor | Electricity | 12 | Expired |
| US10777453B2 | Low resistivity films containing molybdenum | Electricity | 12 | Active |
| US6951765B1 | Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactor | Chemistry; Metallurgy | 11 | Expired |
| US10049921B2 | Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor | Electricity | 11 | Active |
| US9583386B2 | Interlevel conductor pre-fill utilizing selective barrier deposition | Electricity | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.