Negative-acting chemically amplified photoresist composition
US6576394B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2000 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jun 16, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/122
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemically-amplified, negative-acting, radiation-sensitive photoresist composition that is developable in an alkaline medium, the photoresist comprising:a) a phenolic film-forming polymeric binder resin having ring bonded hydroxyl groups;b) a photoacid generator that forms an acid upon exposure to radiation, in an amount sufficient to initiate crosslinking of the film-forming binder resin;c) a crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises an etherified aminoplast polymer or oligomer;d) a second crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises either 1) a hydroxy substituted- or 2) a hydroxy C1-C4 alkyl substituted-C1-C12 alkyl phenol, wherein the total amount of the crosslinking agents from steps c) and d) is an effective crosslinking amount; ande) a photoresist solvent,and a process for producing a microelectronic device utilizing such a photoresist composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.