Methods for deuterium sintering
US6576522B2 · kind B2 · utility
8Cited by
21References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2000 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jan 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for deuterium sintering to improve the hot carrier aging of an integrated circuit includes (a) providing a partially fabricated integrated circuit structure comprising a semiconductor substrate and a dielectric layer formed on at least a portion of the substrate, the dielectric layer having at least one conductive material via plug formed therein and (b) sintering the structure in the presence of a gas comprising deuterium-containing components at high temperatures prior to a metallization layer being deposited on the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.