Process of vapor phase growth of nitride semiconductor
US6576571B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jul 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a process for vapor phase growth of gallium nitride compound semiconductor which yields uniform crystal layers with good reproducibility. The process comprises forming a first nitride semiconductor layer on a substrate, forming thereon a protective film for crystal growth prevention in such a way that it has partly open window regions through which the first nitride semiconductor layer is exposed, forming a second nitride semiconductor layer by selective growth from the first nitride semiconductor layer at a crystal growth starting temperature, and continuing crystal growth at a temperature higher than the crystal growth starting temperature. The vapor phase growth at a low temperature yields a uniform crystal layer, and the ensuing vapor phase growth at a raised temperature yields a uniform crystal layer with good reproducibility in conformity with the first crystal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.