Goshi Biwa
73Patents
16h-index
22Co-inventors
84Inventor score
Filing activity: Jul 17, 2001 → Dec 10, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6858081B2 | Selective growth method, and semiconductor light emitting device and fabrication method thereof | Electricity | 713 | Expired |
| US6818465B2 | Nitride semiconductor element and production method for nitride semiconductor element | Electricity | 477 | Expired |
| US7002182B2 | Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit | Electricity | 467 | Expired |
| US7087932B2 | Semiconductor light-emitting device and semiconductor light-emitting device | Electricity | 466 | Expired |
| US6967353B2 | Semiconductor light emitting device and fabrication method thereof | Electricity | 464 | Expired |
| US8686447B2 | Light emitting unit and display device | Electricity | 155 | Active |
| US7033436B2 | Crystal growth method for nitride semiconductor and formation method for semiconductor device | Electricity | 76 | Expired |
| US6623560B2 | Crystal growth method | Electricity | 27 | Expired |
| US6881982B2 | Semiconductor light emitting device | Electricity | 24 | Expired |
| US6870190B2 | Display unit and semiconductor light emitting device | Electricity | 21 | Expired |
| US7067339B2 | Selective growth method, and semiconductor light emitting device and fabrication method thereof | Emerging Cross-Sectional Technologies | 21 | Expired |
| US7129515B2 | Lighting system | Electricity | 20 | Expired |
| US6924500B2 | Semiconductor light-emitting device and process for producing the same | Electricity | 20 | Expired |
| US7250320B2 | Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof | Electricity | 19 | Expired |
| US7564064B2 | Semiconductor light emitting device, an integrated semiconductor light emitting apparatus, an image display apparatus, and an illuminating apparatus having a semiconductor layer with conical crystal portion | Electricity | 16 | Active |
| US7129514B2 | Image display unit | Electricity | 16 | Expired |
| US6828591B2 | Semiconductor light emitting device and fabrication method thereof | Electricity | 14 | Expired |
| US7135348B2 | Semiconductor light emitting device and fabrication method thereof | Electricity | 14 | Expired |
| US7364805B2 | Crystal film, crystal substrate, and semiconductor device | Electricity | 14 | Expired |
| US7122826B2 | Image display unit | Electricity | 14 | Expired |
| US6576571B2 | Process of vapor phase growth of nitride semiconductor | Electricity | 13 | Expired |
| US7030421B2 | Semiconductor light emitting device and fabrication method thereof | Electricity | 11 | Expired |
| US7205168B2 | Semiconductor light emitting device, its manufacturing method, integrated semiconductor light emitting apparatus, its manufacturing method, illuminating apparatus, and its manufacturing method | Electricity | 11 | Expired |
| US6734030B2 | Semiconductor light emitting device and method of fabricating semiconductor light emitting device | Electricity | 9 | Expired |
| US6818463B2 | Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device | Electricity | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.